A design of a self-oscillating gate driver that is used for gallium nitride transistors and MOSFETs operating at high frequencies up to few megahertz has been made. A capability of driving one or two transistors is provided. The oscillating mode is obtained using the input capacitance of the power transistors as a part from a resonant circuit. The gate driver is suitable for resonant power stage and soft switching. The proposed gate driver circuit is analyzed and experimentally tested.
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