Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells

We report the improved thermal stability of carbon alloyed Cu0.6Te0.4 for resistive memory applications. Copper-tellurium-based memory cells show enhanced switching behavior, but the complex sequence of phase transformations upon annealing is disadvantageous for integration in a device. We show that addition of about 40 at % carbon to the Cu-telluride layer results in an amorphous material up to 360 °C. This material was then integrated in a TiN/Cu0.6Te0.4-C/Al2O3/Si resistive memory cell, and compared to pure Cu0.6Te0.4. Very attractive endurance (up to 1 x 10^3 cycles) and retention properties (up to 1 x 10^4 s at 85 degrees C) are observed. The enhanced thermal stability and good switching behavior make this material a promising candidate for integration in memory devices.

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