Interfacial Defects: Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale (Adv. Mater. 2/2018)

The defect-driven interfacial electron structure of the Ti/ZrO₂/Al₂O₃/InGaAs system is probed and manipulated by Xing Wu, Litao Sun, Kinleong Pey, and co-workers in article number 1703025 using a specifically designed in situ transmission electron microscopy experimental method. Interfacial defects induced by missing oxygen atoms are found to be the main reason for the device failure. This paves the way to future high-speed and high-reliability devices.

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