Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations

Cottom, J; Gruber, G; Pobegen, G; Aichinger, T; Shluger, AL; (2018) Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations. Journal of Applied Physics , 124 (4) , Article 045302. 10.1063/1.5024608 .

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