Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics

Strain-gated flexible optoelectronics are reported based on monolayer MoS₂. Utilizing the piezoelectric polarization created at metal-MoS₂ interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

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