Light enhanced low-voltage nonvolatile memory was prepared using all-inorganic perovskite quantum dots (QDs) as a semiconductor layer and Ag nanoparticles (NPs) as a floating gate layer. The photo-induced carriers can be produced in CsPbBr 3 QDs under ultraviolet light and trapped in Ag NPs under the action of an external electric field. With the assistance of light, the device exhibited a significantly larger memory window (Δ V th ) under low programming and erasing voltages of ±5 V owing...
3m
Performance of plamson induced hot electrons-based photodetectors largely relies on the photon absorption capability. To improve the optical absorption, many perfect absorbers based on the periodic metallic nanostructures have been designed and fabricated through low-throughput, costly and time-consuming lithographic processes, which seriously limit the future potential applications of plasmonic hot electrons optoelectronics devices. Here, a large-scale, broadband absorber consisting of...
3m
Flexible and wearable electrical devices have attracted extensive research attention in recent years. In the device fabrication process, the low-cost and compatibility with industrialized mass production are of great importance. Herein, membrane-based flexible photodetectors (PDs) based on Polyvinylidene Fluoride filter membrane with the structure of Ag nanowires (NWs)/ZnO NWs/graphene were fabricated by a full-solution method. The built-in electric field due to the ZnO/graphene Schottky...
3m
The failure modes of ZnO nanowires (NWs) with hexagonal cross section subjected to a uniaxial load are systematically investigated by using molecular dynamics (MD) simulations and two theoretical models considering the surface effect. Our results show that two different failure modes of the phase transition and buckling are triggered when the NWs are under uniaxial compression along the [0001] direction, in which the transformation between the two modes is related to the slenderness ratios...
3m
Δεν υπάρχουν σχόλια:
Δημοσίευση σχολίου