A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

The effects of triphenylphosphine (PPh₃)-based n-doping and hexagonal boron nitride (h-BN) insertion on tungsten diselenide (WSe₂) photodetector are systematically studied, and a very high performance WSe₂/h-BN heterostucture-based photodetector is demonstrated with record photoresponsivity (1.27 × 10⁶ A W⁻¹) and temporal photoresponse (rising time: 2.8 ms, decaying time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.

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