Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films

The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)₂Te₃ magnetic topological insulator films is studied, which reveals how the effect is caused by the interplay of the surface states, band-bending and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high temperature quantum anomalous Hall material.

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