Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors

Loto, O; Florentin, M; Masante, C; Donato, N; Hicks, ML; Pakpour-Tabrizi, AC; Jackman, RB; ... Gheeraert, E; + view all Loto, O; Florentin, M; Masante, C; Donato, N; Hicks, ML; Pakpour-Tabrizi, AC; Jackman, RB; Zuerbig, V; Godignon, P; Eon, D; Pernot, J; Udrea, F; Gheeraert, E; - view fewer (2018) Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors. IEEE Transactions on Electron Devices , 65 (8) pp. 3361-3364. 10.1109/TED.2018.2847340 . Green open access

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