Atomically thin quasi-2D GaSe flakes are synthesized via van-der-Waals (vdW) epitaxy on a polar Si (111) surface. The band gap is continuously tuned from its commonly accepted value at 620 down to 700 nm range, which was only attained previously by alloying Te into GaSe (GaSexTe1−x). This is accomplished by manipulating various vdW epitaxy kinetic factors, which allows us to choose between screw-dislocation driven and layer-by-layer growth, and design different morphologies with different material–substrate interaction (strain) energies.
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