Simultaneous elimination of electrically active defects in Si/SiO2 structures by implanted fluorine

The effect of fluorine implantation on oxide and interface trapping centres in Si/SiO2 structures has been investigated using charge injection techniques. Significant reduction of the density of various defects has been observed for ultra-dry and wet oxides after F-implantation. The elimination of the traps takes place in a correlated manner despite the different nature of the centres. The catalytic action of fluorine via strain relaxation or release of defect passivating species is proposed to be the cause of the observed effect.

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