Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale

Abstract

The interface between III–V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The high-speed property gives the light-emitting diodes a high response speed and low dark current, and they are widely used in communications, infrared remote sensing, optical detection, and other fields. The rational design of high-performance devices requires a detailed understanding of the electronic structure at this interface; however, this understanding remains a challenge, given the complex nature of surface interactions and the dynamic relationship between the morphology evolution and electronic structures. Herein, in situ transmission electron microscopy is used to probe and manipulate the structural and electrical properties of ZrO₂ films on Al₂O₃ and InGaAs substrate at the atomic scale. Interfacial defects resulting from the spillover of the oxygen-atom conduction-band wavefunctions are resolved. This study unearths the fundamental defect-driven interfacial electric structure of III–V semiconductor materials and paves the way to future high-speed and high-reliability devices.

The defect-driven interfacial electronic structures of the TiN/ZrO₂/Al₂O₃/InGaAs system are probed and manipulated using a specifically designed in situ transmission electron microscopy experimental method. The interfacial defects are found to result from the spillover of the oxygen-atom conduction-band wavefunctions. This study paves the way to future high-speed and high-reliability devices.

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