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Δευτέρα 21 Μαΐου 2018

1.3 mu m InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers

Wang, J; Hu, H; Yin, H; Bai, Y; Li, J; Wei, X; Liu, Y; ... Liu, H; + view all Wang, J; Hu, H; Yin, H; Bai, Y; Li, J; Wei, X; Liu, Y; Huang, Y; Ren, X; Liu, H; - view fewer (2018) 1.3 mu m InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers. Photonics Research , 6 (4) pp. 321-325. 10.1364/PRJ.6.000321 .

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