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Τρίτη 5 Ιανουαρίου 2016

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V-1 s-1

GA?id=C5CC09702A

Chem. Commun., 2016, Advance Article
DOI: 10.1039/C5CC09702A, Communication
Jian Deng, Yuanxiang Xu, Liqun Liu, Cunfang Feng, Jia Tang, Yu Gao, Yan Wang, Bing Yang, Ping Lu, Wensheng Yang, Yuguang Ma
Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V-1 s-1.
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