Heterostructures of alloyed Bi<sub<x</sub>Sn<sub>1-x</sub>Se layers, 0 ≤ x ≤ 1.0, interleaved with NbSe<sub>2</sub> monolayers were prepared using the modulated elemental reactants technique to investigate the occurrence of antiphase boundaries as a function of Bi concentration. A Rietveld refinement of the c-axis structure of the x = 0.50 compound revealed a reduced gap distance between the Bi plane in the Bi<sub>x</sub>Sn<sub>1-x</sub>Se layers and the Se plane in the NbSe<sub>2</sub> layers relative to the end member compounds, suggesting increased interaction between the layers at this composition. High angle annular dark field scanning transmission electron microscopy images showed no antiphase boundary formation in the Bi<sub>x</sub>Sn<sub>1-x</sub>Se layers for x = 0.24, some antiphase boundary formation when x = 0.50, and increased antiphase boundary formation for x = 0.73. Correlated with the absence of antiphase boundary formation for values of x < 0.50 and the increasing presence of antiphase boundaries for x ≥ 0.5, electrical transport measurements showed interlayer charge transfer initially increased with x, then decreased as x was increased to 0.50 and beyond.
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