Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor

Potts, SE; Dingemans, G; Lachaud, C; Kessels, WMM; (2012) Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 30 (2) , Article 021505. 10.1116/1.3683057 .

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