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Δευτέρα 22 Μαΐου 2017

Low-temperature, high-mobility, solution-processed metal oxide semiconductors fabricated with oxygen radical assisting perchlorate aqueous precursors

Chem. Commun., 2017, Accepted Manuscript
DOI: 10.1039/C7CC01100H, Communication
Peixiong Gao, Linfeng Lan, Zhenguo Lin, Sheng Sun, Yuzhi Li, Wei Song, Erlong Song, Peng Zhang, Junbiao Peng
In this report, a simple and general chemical route for fabricating MO semiconducting films at relatively low temperature without any fuel additives or special annealing steps was demonstrated. The precursor,...
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